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Organic Cleaning Process Flow
Category:
Process Technology
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Release time:
2025-06-13
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Wet chemical organic cleaning in semiconductor manufacturing is a crucial process for removing organic contaminants (such as photoresist, resin, grease, etc.). The process must balance high cleanliness with the protection of the device structure. The following is a typical process flow and technical points:
1. Pre-Clean
Removal of large particulate contaminants: Use deionized water for initial rinsing to remove large particulate contaminants and dust from the wafer surface. This process usually uses ultrasound or spraying to improve cleaning efficiency.
Chemical pretreatment: Place the wafer in a container containing chemical reagents for pre-soaking. These chemical reagents help to decompose and remove organic contaminants from the wafer surface.
2. Cleaning (Organic Removal)
Alkaline solution cleaning: Use an alkaline solution (such as EKC) for deep cleaning to remove organic contaminants and particulate matter from the wafer surface. Alkaline solutions effectively decompose organic matter and convert it into substances that are easy to clean.
Acidic solution cleaning: After alkaline solution cleaning, an acidic solution (such as a HF/HNO3 mixture) may be used for further cleaning to remove the oxide layer and other residues from the wafer surface.
Chelating agent cleaning: For certain specific contaminants, such as metal ions, a chelating agent may be used for cleaning. Chelating agents can form stable complexes with metal ions, thereby removing them from the wafer surface.
3. Rinse
Deionized water (DIW): Multi-step graded rinsing (rough rinsing → fine rinsing), resistivity must be >18 MΩ·cm.
IPA displacement drying: Using the low surface tension characteristics of IPA to reduce watermarks (Marangoni drying).
4. Post-Clean
SC1 cleaning (APM, NH₄OH:H₂O₂:H₂O): Ratio 1:1:5~1:2:7, removes residual organic matter and particles.
Diluted hydrofluoric acid (DHF): 0.5-1% HF, removes oxide layers and metallic impurities (optional).
5. Drying
Spin drying: High-speed rotation (1000-3000 rpm) to remove droplets.
Nitrogen purging (N₂ Gun): Ultra-clean nitrogen purging of the surface to avoid secondary contamination.
Key Control Parameters
Temperature: Affects the rate of chemical reactions and requires real-time monitoring (±1℃ accuracy).
Concentration: Regularly titrate and calibrate mixed solutions such as SPM and SC1.
Particle control: Filter grade ≤0.1 μm to avoid cleaning solution contamination.
Metal contamination: Reagents must meet SEMI C12 standards (e.g., Fe<1 ppb).
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