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Wafer cleaning process
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Process Technology
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Release time:
2025-06-20
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Wafer cleaning processes typically involve multiple steps to ensure the complete removal of contaminants and a perfectly clean surface.
A typical wafer cleaning process includes the following main steps:
1. Pre-Clean
The purpose of pre-cleaning is to remove loose contaminants and large particles from the wafer surface. This is usually done by rinsing with deionized water (DI Water) and ultrasonic cleaning. Deionized water can initially remove particles and dissolved impurities from the wafer surface, while ultrasonic cleaning uses cavitation to break the bond between particles and the wafer surface, making the particles easier to remove.
2. Chemical Cleaning
Chemical cleaning is one of the core steps in the wafer cleaning process. It uses chemical solutions to remove organic matter, metal ions, and oxides from the wafer surface.
Removing organic matter: Acetone or a mixture of ammonia/hydrogen peroxide (SC-1) is usually used to dissolve and oxidize organic contaminants. The typical ratio of SC-1 solution is NH₄OH:H₂O₂:H₂O = 1:1:5, and the temperature used is about 20°C.
Removing metal ions: Nitric acid or a mixture of hydrochloric acid/hydrogen peroxide (SC-2) is used to remove metal ions from the wafer surface. The ratio of SC-2 solution is typically HCl:H₂O₂:H₂O = 1:1:6, and the temperature is maintained at around 80°C.
Removing oxides: Some processes require the removal of the natural oxide layer from the wafer surface. In this case, hydrofluoric acid (HF) solution is used. The typical ratio of HF is HF:H₂O = 1:50, and it can be used at room temperature.
3. Final Clean
After chemical cleaning, the wafer usually needs a final clean to ensure that no chemical residue remains on the surface. The final cleaning mainly uses deionized water for thorough rinsing. In addition, ozone water cleaning (O₃/H₂O) is also used to further remove residual contaminants from the wafer surface.
4. Drying
The cleaned wafer must be dried quickly to prevent watermarks or recontamination. Common drying methods include spin drying and nitrogen purging. The former removes water from the wafer surface by high-speed rotation, while the latter ensures complete drying of the surface by blowing dry nitrogen.
Wafer cleaning technology is a crucial part of semiconductor manufacturing. The use of a combination of various cleaning methods can effectively remove various contaminants from the wafer surface, providing a clean substrate surface for subsequent processes. With continuous technological advancements, cleaning processes are constantly being optimized to meet the needs of higher precision and lower defect rates in semiconductor manufacturing.
Kexin Microelectronics Co., Ltd. - Leading the Innovation of Semiconductor Cleaning Technology
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