EKC solution cleaning process
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Process Technology
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Release time:
2025-07-07
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EKC solution cleaning is a crucial step in semiconductor manufacturing used to remove residues and contaminants from the wafer surface. Below is a detailed description of the EKC solution cleaning process:
Pre-treatment: Before EKC solution cleaning, wafers typically undergo pre-treatment, including acid washing and deionized water rinsing, to remove large particulate matter and initial contaminants from the surface.
Acid washing: Acid washing uses an acidic solution (such as sulfuric acid, nitric acid, etc.) to etch the wafer surface, removing the oxide layer and some metallic impurities. The acid washing time and temperature depend on the specific situation; it is generally performed at room temperature for several minutes to over ten minutes.
EKC solution cleaning: The pre-treated wafer is placed in a cleaning tank containing EKC solution and cleaned under specific temperature and time conditions. The main components of EKC solution include hydroxylamine (such as hydroxylamine, potassium hydroxide, sodium hydroxide, etc.), organic acids (such as citric acid, oxalic acid, etc.), surfactants (such as polyether silicone oil), and deionized water. These components work together to effectively remove polymers, metal ions, and other organic contaminants from the wafer surface. The cleaning time is generally 20 to 30 minutes, with the temperature controlled at around 90°C.

Deionized water rinsing: After cleaning, the wafer is thoroughly rinsed with deionized water to remove residual EKC solution and loosened contaminants. The purity of the deionized water is very high to avoid introducing new impurities.
Drying: The rinsed wafer is dried, usually using spin drying or nitrogen blowing. The drying time is generally around 5 minutes to ensure the wafer surface is completely dry.
Post-treatment: Depending on the needs, further post-treatment steps may be required, such as polishing and inspection, to ensure that the cleanliness and flatness of the wafer surface meet the requirements of subsequent processes.
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