The quality inspection results of 8-inch gallium oxide substrates by Gallium Semiconductor have been announced, leading internationally!

In July 2025, Hangzhou Gallium Semiconductor Co., Ltd. (hereinafter referred to as "Gallium Semiconductor")'s 8-inch gallium oxide substrate passed tests by well-known domestic and international institutions, and jointly released the test results.

Third-party test results show that the 8-inch substrate's XRD rocking curve full width at half maximum (FWHM) is less than 30 arcsec, reaching an internationally leading level. The emergence of high-quality 8-inch gallium oxide substrates marks a comprehensive acceleration in the industrial application of gallium oxide and is an important milestone in the industry's development.

Shenzhen Pinghu Laboratory Test Results

The tested sample is an 8-inch gallium oxide substrate, with a total of 5 measurement points. The XRD rocking curve FWHM test results range from 22 to 26 arcsec.

8-inch substrate XRD rocking curve FWHM third-party test results - (Shenzhen Pinghu Laboratory)

Malvern Panalytical Asia Pacific Excellence Application Center Test Results

The tested sample is an 8-inch gallium oxide substrate, with a total of 5 measurement points. The XRD rocking curve FWHM test results are: 16.7 arcsec, 16.2 arcsec, 15.4 arcsec, 15.3 arcsec, and 12.4 arcsec respectively.

8-inch substrate XRD rocking curve FWHM third-party test results - (Malvern Panalytical Asia Pacific Excellence Application Center)

1. The Industrial Significance of 8 Inches

In March 2025, Gallium Semiconductor released the world's first 8-inch single crystal of fourth-generation semiconductor gallium oxide and processed an 8-inch substrate, setting a new global record for gallium oxide single crystal size. China's gallium oxide has taken the lead in entering the 8-inch era, which has profound industrial significance:

Firstly, 8-inch gallium oxide can be compatible with existing 8-inch production lines of silicon-based chip factories, which will significantly accelerate its industrial application.

Secondly, increasing the size of gallium oxide substrates can improve utilization rates, allowing the number of chips produced per wafer to grow exponentially, reducing production costs and improving production efficiency.

Finally, China's breakthrough in the 8-inch technology barrier not only marks technological progress in the ultra-wide bandgap semiconductor field but also gives China's gallium oxide industry a competitive edge in the global semiconductor market, strongly promoting China's advantageous position in the global semiconductor competition landscape.

2. 8-Inch Has Achieved Sales and Shipments

Currently, the gallium oxide substrate wafers on sale are mainly 2-inch and 4-inch, which are difficult to be compatible with mainstream Fab production line equipment, increasing the difficulty and cost of R&D for downstream device manufacturers, resulting in slow progress in gallium oxide applications.

The quality test results fully prove that Gallium Semiconductor's 8-inch wafer substrates have excellent quality and can meet the production requirements of silicon-based 8-inch production lines, which will greatly reduce the difficulty and cost of R&D at the downstream application end and promote rapid industrial application.

Gallium Semiconductor's gallium oxide substrates have gradually achieved industrialization, providing downstream customers with large-size, high-quality gallium oxide single crystal substrate products. Currently, Gallium Semiconductor's 8-inch substrates have achieved product sales and shipments.

Gallium Semiconductor's Self-Developed Gallium Oxide Dedicated

VB Method Crystal Growth Equipment Fully Open for Sale

Gallium Semiconductor not only provides gallium oxide single crystal substrate products but also fully opens the sales of gallium oxide dedicated VB method crystal growth equipment and supporting process packages.

In September 2024, Gallium Semiconductor launched the first self-developed gallium oxide dedicated crystal growth equipment, which not only meets the high-temperature and high-oxygen environment requirements for gallium oxide growth but also enables fully automated crystal growth, reducing manual intervention and significantly improving production efficiency and crystal quality.

Through process control, this equipment can obtain large-size single crystals with various crystal planes and supports upgrades to even larger single crystals, meeting the research, production, and other needs of universities, research institutes, and enterprise customers for gallium oxide crystal growth. This type of gallium oxide VB method crystal growth equipment and its process package are fully open for sale.