Wafer Cleaning Methods After Etching
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Process Technology
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Release time:
2025-11-11
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After wafer etching, cleaning is essential to remove residual contaminants and impurities from the etching process, ensuring the cleanliness of the wafer surface. The cleaning methods following wafer etching are as follows:
1. EKC Solution Cleaning:
Use the EKC solution (a mixture of NMP solvent and an alkaline amine) to perform the first cleaning step on the etched semiconductor wafers. This method effectively removes polymers from deep vias.
The cleaning method can be either soaking or spraying, with soaking typically lasting 30 minutes at a temperature of 90°C.
2. NMP Solvent Cleaning:
After cleaning with the EKC solution, a second cleaning step is performed using NMP solvent (N-methyl-2-pyrrolidone). NMP is a pure organic solvent that is non-corrosive, making it ideal for further removing any remaining trace amounts of polymer.
The cleaning method can also be either soaking or spraying, with a soaking time of 30 minutes and a soaking temperature of 90°C.
3. IPA Solvent Cleaning:
After cleaning with the NMP solvent, a third rinse is performed using IPA solvent (isopropyl alcohol). The IPA solvent further cleans the wafer surface, removing any remaining organic residues.
The cleaning method can be either soaking or spraying, with a soaking time of 5 minutes.
4. Pure water cleaning:
After the aforementioned chemical cleaning, a fourth rinse is performed using pure water (typically deionized water). This step primarily aims to remove residual chemicals and minimize ionic contamination on the wafer surface.
The cleaning method can be either soaking or spraying, with a soaking time of 5 minutes.
5. Drying Treatment:
Finally, the cleaned semiconductor wafers are dried. The drying method can be either spin-drying or nitrogen-blown drying, with a typical duration of 5 minutes.
In addition, there are several other commonly used wafer cleaning techniques, such as megasonic cleaning and ozone-based cleaning systems. Megasonic cleaning leverages the powerful force generated by the collapse of tiny bubbles created through high-frequency vibrations, effectively dislodging contaminants from the wafer surface. Meanwhile, the ozone cleaning system utilizes ozone's strong oxidizing properties to remove organic substances, particles, and metallic contaminants.
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Wafer,Etching,Cleaning,Dry,Semiconductor
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