SC1 cleaning (Standard clean1)
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Process Technology
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Release time:
2024-07-31
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SC1 cleaning (Standard clean1)
Purpose: Mainly to remove particle contamination (particles) and also remove some metal impurities.
SC1 composition: NH4OH: H2O2: H2O=1:2:50 30~50℃
Chemical reaction principle:
Principle of particle removal: Due to the oxidation of H2O2, an oxide film (about 6nm and hydrophilic) is generated on the surface of the silicon wafer, which is corroded by NH4OH and oxidized again immediately after corrosion. Oxidation and corrosion are repeated, so the particles attached to the surface of the silicon wafer also fall into the cleaning solution along with the corrosion layer.
SC1 tanks usually use megasonic wave method. During megasonic cleaning, due to the megasonic acceleration, particles of ≥ 0.2 μm can be removed, and damage to the wafer caused by ultrasonic cleaning can be avoided.
SC1,RCA Cleaning
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