Beijing University of Science and Technology showcases new strength in key chip materials and technologies

Recently, University of Science and Technology Beijing held an unveiling ceremony for the Frontier Interdisciplinary Science and Technology Research Institute, the Future Technology College, and the Integrated Innovation Center for Key Materials and Technologies of Future Chips.
The above three units are committed to continuously promoting a development model that integrates talent cultivation, scientific research, and platform construction, striving to build a world-class frontier interdisciplinary scientific research platform and a leading talent training base, and seizing the commanding heights of future science and technology strategy.

Data shows that in recent years, University of Science and Technology Beijing has frequently made breakthroughs in the field of chips. At the beginning of this year, University of Science and Technology Beijing announced that Academician Zhang Yue and Professor Zhang Zheng's team at the Frontier Interdisciplinary Science and Technology Research Institute published important research results in Nature Materials.

Mass production of high-quality two-dimensional transition metal dichalcogenides (TMDCs) is a major challenge in the industrial manufacturing of two-dimensional devices. Academician Zhang Yue and Professor Zhang Zheng's team proposed a method called "two-dimensional Czochralski (2DCZ)", which can rapidly grow centimeter-size, grain-boundary-free single-crystal MoS2 grains under normal pressure. These MoS2 single crystals exhibit excellent uniformity and high quality, with extremely low defect density.

Statistical analysis of field-effect transistors made from MoS2 shows high device yield and minimal mobility variation. This 2DCZ method is of great significance for the manufacturing of high-quality and scalable two-dimensional semiconductor materials and devices, providing an important material basis for the manufacturing of next-generation integrated circuits. The relevant results were published in Nature Materials on January 10, 2025, under the title "Two-dimensional Czochralski growth of single-crystal MoS2". The first author is Dr. Jiang He.

In addition, last July, University of Science and Technology Beijing announced the signing of a strategic cooperation agreement with the new Tsinghua Unigroup. The two parties will focus on the forward-looking technologies and key core technologies of advanced process integrated circuits to carry out scientific and technological innovation, achievement transformation, talent cultivation, and other comprehensive cooperation, jointly creating a future science and technology strategic highland in the field of integrated circuits. This mainly includes jointly building high-level R&D platforms such as the "Joint R&D Center for Two-Dimensional Materials and Device Integration Technology" and the "8-inch Two-Dimensional Semiconductor Wafer Manufacturing and Integration Innovation Center", focusing on industrial-academic-research cooperation in the aspects of large-scale preparation processes of two-dimensional semiconductor materials and devices, chip design and manufacturing, and collaboratively tackling key problems in the preparation of two-dimensional semiconductor materials, key equipment R&D, and integrated manufacturing process technologies.