Application of silicon carbide diamond heatsink in GaN power amplifier

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Industry News

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Release time:

2025-06-19

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Recently, researchers from Henan Kezhicheng Third-Generation Semiconductor Carbon-Based Chip Co., Ltd. published a research paper titled "Application of Silicon-Based Diamond Heatsink in GaN Power Amplifiers" in the core domestic semiconductor journal "Semiconductor Technology." The paper systematically studies, simulates, and verifies the thermal management effect of silicon-based diamond materials on GaN radio frequency power amplifier devices.

Experimental verification shows:

1. Improved Heat Dissipation Performance: The silicon-based diamond heatsink exhibits significantly better thermal conductivity than traditional molybdenum-copper substrates, approaching the performance of single-crystal diamond heatsinks. This effectively addresses the heat dissipation bottleneck of GaN devices in scenarios such as 5G base stations;

2. Cost Control Breakthrough: By depositing nano-scale diamond films on silicon substrates, the cost of the heatsink material is reduced to about 10% of that of single-crystal diamond, laying the foundation for the large-scale application of diamond materials.

This research is expected to reshape the market landscape of radio frequency power amplifier chip thermal management. In the context where high-end heat dissipation materials and thermal management technologies have long been monopolized by Japanese and American companies, and the thermal efficiency of traditional molybdenum-copper substrates cannot meet the needs of high-power GaN devices, diamond materials have attracted significant attention due to their highest thermal conductivity in nature. However, the excessively high price (≥1500 yuan/piece) severely restricts the industrialization and promotion of diamond in thermal management applications.

The silicon-based diamond solution provides a practical and effective path for the industrialization and promotion of diamond thermal management applications. Against the backdrop of accelerated deployment of small and micro base stations and breakthroughs in low-gate voltage control technology, the global GaN power device market is experiencing an annual growth rate exceeding 30% (projected to reach US$3 billion in 2025). This technology can solve the heat dissipation problems of highly integrated, high-power GaN amplifiers and is expected to be applied to mobile terminals, providing a highly efficient thermal management solution. Leveraging the advantages of the diamond material industry in Henan (accounting for 80% of national output), a technology chain of "material innovation-device design-application integration" is formed. At the same time, this heatsink technology can synergize with the company's high-frequency filter products to further optimize the overall performance of 5G radio frequency modules and terminal products.

Article Link:

DOI:10.13290/j.cnki.bdtjs.2025.06.009

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