Common solutions for wet etching
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Process Technology
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Release time:
2025-08-01
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Common wet etching solutions include phosphoric acid, hydrofluoric acid, buffered oxide etchant (BOE), aluminum etchant (M2), and nitric acid.
Phosphoric acid etchant: Composed of pure phosphoric acid and deionized water, it operates at 160 degrees Celsius and is used to etch silicon nitride films and the underlying oxide films.
Hydrofluoric acid etchant: Primarily used for etching oxide films, it is categorized into CHF, LHF, and DHF based on concentration. CHF is a 49% hydrofluoric acid etchant, mainly used for etching Poly and nitrides; LHF is a diluted product of CHF with a hydrofluoric acid to water ratio of 50:1, offering stable etching speed; DHF is a further diluted product of LHF, and due to its low concentration, it has a very low etching rate, mainly used for etching the natural oxide film on the wafer surface.
Buffered oxide etchant (BOE): Also known as BOE (Buffered Oxide Etch), it is a mixture of NH4F, HF, and a surfactant, mainly used to etch oxide films in deep trenches on wafers.
Aluminum etchant (M2): A mixture of phosphoric acid, nitric acid, and acetic acid in a ratio of 70:2:12, it reacts at 75 degrees Celsius and is mainly used in the selective etching process of cobalt manufacturing.
Nitric acid: Nitric acid is a strong oxidizing agent that can react chemically with metals to remove metal layers. In semiconductor manufacturing, nitric acid is often used to remove metal layers such as copper and aluminum.
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