Pre-Clean

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Process Technology

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Release time:

2025-09-01

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Pre-Clean is a key step in the semiconductor manufacturing process, aimed at removing impurities and contaminants from the surface of silicon wafers to ensure the accuracy and stability of subsequent processes. Pre-cleaning is usually performed before processing begins, using methods such as deionized water (DI Water) rinsing and ultrasonic cleaning to remove loose contaminants and large particles from the surface.

For example, cleaning steps are required before thin film deposition or before some ion implantation. Hydrofluoric acid is usually used. RCA Cleaning, such as shown in the figure below. pre furnace clean Chemical solutions are used. DHF+SPM+SC1+SC2 and use IPA dry for drying.

1. Pre-Clean Process Technical Parameters

1. Pre-furnace tube cleaning process

• Application: Used for pre-furnace tube cleaning process

• Process description: Ensures the surface cleanliness of wafers before entering the furnace tube

• Chemical combination: DHF + SPM + SC1 + SC2 + IPA dry

2. RCA cleaning process

• Application: Used for standard RCA cleaning process

• Process description: Uses the standard RCA cleaning procedure to remove surface contaminants

• Chemical combination: DHF + SPM + SC1 + SC2 + IPA dry

3. Wet photoresist removal process

• Application: Used for photoresist removal after dry etching process

• Process description: Removes residual photoresist after dry etching

• Chemical combination: DHF + SPM + SC1 + IPA dry

4. Oxide wet etching process

• Application: Used for oxide wet etching or removal

• Process description: Selectively removes oxide layers

• Chemical combination: HF or BOE + SC1 + IPA dry

5. Silicon nitride film removal process

• Application: Used for wet removal of silicon nitride layers

• Process description: Removes silicon nitride layers and controls SiN/oxide selectivity ratio

• Chemical combination: DHF + H₃PO₄ + SC1 + IPA dry

6. Front-end poly/oxide removal process

• Application: Used for control wafer recovery treatment

• Process description: Bundle removal of different metals

• Chemical combination: HF/HNO₃ + HF + SC1 + SC2 + IPA dry

7. Back-end metal/non-metal film removal process

• Application: Used for removal of back-end metal or non-metal films

• Process description: Removes metal or non-metal films in back-end processes

• Chemical combination: SPM + HF + SC1 + IPA dry

2. Chemical Reagent Description

• DHF: Diluted Hydrofluoric Acid

• SPM: Sulfuric acid-Peroxide Mixture

• SC1: Standard Clean 1 (NH₄OH:H₂O₂:H₂O)

• SC2: Standard Clean 2 (HCl:H₂O₂:H₂O)

• IPA dry: Isopropyl Alcohol drying

• BOE: Buffered Oxide Etchant

• H₃PO₄: Phosphoric Acid

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