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Professor Jiangnan Dai and Associate Professor Yang Peng's team at Huazhong University of Science and Technology have achieved a breakthrough in milliwatt-level, sub-100-nanometer far-ultraviolet Micro-LED devices—the shortest wavelength to date.
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Industry News
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Release time:
2025-09-29
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Recently, a research team from Huazhong University of Science and Technology has made significant progress in the field of AlGaN-based deep-ultraviolet LED light sources. The findings, titled "Milliwatt-Level 230-nm AlGaN-based Far-Ultraviolet Micro-LEDs," were published in IEEE Electron Device Letters (DOI: 10.1109/LED.2025.3608875). The study successfully fabricated an AlGaN-based far-ultraviolet micro-LED device capable of emitting up to 2.8 mW of optical power at a wavelength of 230 nm—currently the shortest-wavelength milliwatt-level far-ultraviolet micro-LED ever reported. This research was led by the Wide Bandgap Semiconductor Materials and Devices Team at Huazhong University of Science and Technology, with Professor Jiangnan Dai and Associate Professor Yang Peng serving as the corresponding authors. Dr. Yufan Wei and Dr. Zhiwei Gao are listed as co-first authors.
Paper screenshot
Far-ultraviolet light with wavelengths below 240 nm holds tremendous potential for applications in areas such as ultraviolet lithography, secure communications, and disinfection/sterilization. Moreover, unlike longer-wavelength UV radiation, far-ultraviolet light causes minimal harm to human skin and eye tissues, making it ideal for environmental disinfection even in occupied spaces—allowing for "human-robot coexistence." AlGaN-based deep-ultraviolet LEDs are prime candidates as the next-generation short-wavelength UV light sources; however, the devices' light output remains severely limited by their relatively low Light Extraction Efficiency (LEE), particularly when it comes to generating far-ultraviolet light at shorter wavelengths—a challenge that urgently requires further resolution.
This study first used FDTD simulations to verify the suitability of the micro-device design for deep-ultraviolet emission, revealing that smaller-sized mesa structures can significantly enhance device light extraction—particularly boosting the lateral-polarized light extraction efficiency (LEE) by up to 102.7%. Subsequently, a deep-ultraviolet micro-LED array with dimensions of 30 μm was fabricated, achieving a maximum optical output power of approximately 2.8 mW at an injection current of 250 mA, along with a peak emission wavelength of 230 nm. Notably, this represents the shortest emission wavelength reported to date for milliwatt-level deep-ultraviolet micro-LEDs. These findings pave the way for breakthroughs in AlGaN-based deep-ultraviolet LED technology and contribute to the advancement of related industrial development.
Figure 1: Device Structure and Optical Performance Testing
Paper link: https://ieeexplore.ieee.org/document/11159121
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