APM: The "Stripping Expert" for Particle Contamination
Category:
Process Technology
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Release time:
2025-11-19
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1. Constituent Components
APM, short for Ammonium Hydroxide–Hydrogen Peroxide Mixture, is more widely known in the industry as SC-1 (Standard Clean-1). Its typical ratio is NH₄OH: H₂O₂:H₂O = 1:1:5 to 1:2:7—specifically, ammonia solution : hydrogen peroxide : ultrapure water.

2. Principle of Operation and Process Application
APM's core mission is to remove particle contamination and trace organic contaminants from the surface of silicon wafers. Its working principle is remarkably ingenious:
(1) Micro-etching and Re-oxidation: A small amount of ammonia water slightly and isotropically etches the silicon surface, while hydrogen peroxide instantly oxidizes the exposed silicon into SiO₂. This cyclical "etching-oxidation" process loosens and causes particles adhering to the surface to "float" upward.
(2) Electrostatic Repulsion: The APM solution has a high pH value (alkaline), which causes both the silicon wafer surface and particle surfaces to carry identical negative charges. According to Coulomb's law, "like charges repel," causing the particles to be pushed away from the silicon wafer surface due to electrostatic repulsion forces.
Primary application scenarios:
(1) Front-end process cleaning: Before critical steps such as gate oxide formation and thin-film deposition, APM must be used for cleaning to ensure the interface remains particle-free.
(2) Post-Planarization Cleaning: Used after Chemical Mechanical Polishing (CMP) to remove polishing slurry particles and residual organic contaminants.
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