SPM: A "Powerful Solvent" for Organic Compounds and Metals
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Process Technology
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Release time:
2025-11-24
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1. Constituent Components
SPM, which stands for Sulfuric Acid–Hydrogen Peroxide Mixture, typically has a ratio of H₂SO₄:H₂O₂ ranging from 3:1 to 4:1 (sulfuric acid to hydrogen peroxide).
2. Principle of Operation and Process Applications
SPM is the most "aggressive" step in the cleaning process, primarily responsible for removing stubborn organic residues (such as photoresist) and certain metal contaminants.
Strong oxidation and dehydration: Concentrated sulfuric acid exhibits extremely strong dehydrating properties, effectively "extracting" hydrogen and oxygen from organic compounds in the form of water, thereby causing carbonization. Meanwhile, hydrogen peroxide decomposes at high temperatures (typically heated above 120°C), releasing a large number of highly oxidizing oxygen atoms that can completely oxidize the carbonized organic material into carbon dioxide and water.
Primary application scenarios:
(1) Photoresist Removal: After ion implantation or etching processes, hard photoresist residues often remain on the silicon wafer surface. SPM is one of the most effective methods for removing these residues.
(2) Heavy Metal Cleaning: Effectively removes metallic contaminants such as iron and chromium.
(3) Initial Cleaning After Severe Contamination: Serving as the first step in the cleaning sequence, this prepares the surface for subsequent, more delicate cleaning processes.
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