Marangoni drying process parameters

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Process Technology

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Release time:

2025-12-10

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Introduction

As semiconductor devices continue to shrink below the 28nm node, the drying process following cleaning has become a critical step affecting yield. Traditional drying methods—such as spin drying, N₂ purging, and hot plate drying—rely on mechanical forces or thermal energy, making them prone to causing structural damage and leaving residues.

Marangoni drying utilizes surface tension gradients to drive the autonomous flow of liquids, featuring mildness and high efficiency, and is well-suited for structures with high aspect ratios.

I. Process Parameter System for Marangoni Drying

Marangoni drying relies on a three-dimensional process window defined by three coupled parameters; any deviation from these parameters can lead to defects.

1.1 IPA Vapor Concentration and Saturation Control

Optimal window: 90–98% gas-phase saturation.
Mechanism of influence:

1. Too low (<85%) → Insufficient surface tension gradient → Water streaks.

2. Excessive (>100%) → IPA condensation → Interface instability → Wake.

Critical Control Point:

1. Flow rate: 50–150 mL/min.

2. Diffuser height: 15–25 mm.

3. Atomization particle size: <10 μm.

4. Cavity sealing: Leakage rate < 5%.

1.2 Interface Advancement Speed Optimization

Optimal window: 0.4–1.2 mm/s.
Mechanism of influence:

1. Too slow (<0.3 mm/s) → Local saturation of IPA → Water marks.

2. Too fast (>1.5 mm/s) → Liquid bridge stretching → Wake/structure collapse.

Control method:

1. Wafer advancement rate: 0.3–1.0 mm/s (adjustable).

2. Real-time feedback from interface sensors (optical/capacitive).

3. PID closed-loop dynamic adjustment.

1.3 The Importance of Consistent Surface Condition

Surface uniformity is the basis of the Marangoni effect.
Target indicators:

1. Si-H coverage >95%.

2. Contact angle uniformity <5°.

3. Impact of upstream processes: Steps such as DHF, SC-1, SC-2, QDR/FR must be strictly controlled to prevent unevenness in wettability, charge, and residue.

II. The Fundamental Difference Between Marangoni Drying and Traditional Drying

Comparison dimension	Marangoni drying	Traditional drying
Physical principles	Surface tension gradient-driven	Mechanical/Thermal Driven
Force	Moderate interfacial stress (on the mN/m level)	Strong mechanical force/capillary force
Control dimension	Multi-parameter coupling (IPA, velocity, surface condition)	Single parameter as the main one (rotational speed, temperature, etc.)
Structural protection	Excellent, suitable for high aspect ratio structures	Poor quality can easily lead to structural damage.
Process window sensitivity	High, requiring precise coordinated control	Lower
Applicable node	<28 nm advanced process	Mature process

III. Typical Defects and Cause Analysis

Defect Type	Root cause	Process association
Water mark	Insufficient IPA, weak surface tension gradient	Low IPA saturation / Too slow speed
Wake trail	The interface is moving too fast, causing the liquid film to stretch.	Too high speed / IPA oversaturation
Spot	Uneven surface condition or residual cleaning agents	Inconsistent upstream processes / Insufficient QDR

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