Wet-etching equipment cleaning solution
Category:
Process Technology
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Release time:
2025-12-12
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In the semiconductor manufacturing process, the cleanliness of the wafer surface directly affects device performance and yield. As a critical surface treatment process, wet cleaning hinges on the selection and formulation of chemical solutions.
I. SC-1
- Formula: NH₄OH / H₂O₂ / H₂O = 1 : 1 : 5
- Property: Alkaline Cleaning Solution
- Main functions: Remove particles, metals, and organic substances.
- Cleaning mechanism:
1. Hydrogen peroxide oxidizes the particles, causing partial decomposition;
2. Ammonium hydroxide slightly corrodes the oxide layer, causing particles to detach and accumulate negative charges on both the surface and the particles themselves, thereby generating electrostatic repulsion.
3. The repulsive force causes particles to detach from the surface and prevents them from reattaching.
II. SC-2
- Formula: HCl / H₂O₂ / H₂O = 1 : 1 : 6
- Property: Acidic Cleaning Solution
- Main function: Remove metal ions
- Cleaning mechanism:
1. Hydrogen peroxide oxidizes metals;
2. Hydrochloric acid dissolves by forming soluble chlorides with metal ions.
III. SPM (Sulfuric Acid-Hydrogen Peroxide Mixture, also known as Piranha)
- Formula: H₂SO₄ / H₂O₂ = 5:1 to 2:1
- Operating conditions: Heat to approximately 120℃
- Main function: Removes metals and organic substances, particularly suitable for pre-treating hydrophobic surfaces.
- Cleaning mechanism:
1. Sulfuric acid dehydrates and carbonizes organic substances;
2. Hydrogen peroxide oxidizes carbides into CO or CO₂ gas.
4. Dilute Hydrofluoric Acid (DHF)
- Formula: H₂O : HF = 100 : 1 to 20 : 1
- Main function: Remove the oxide film from the wafer surface and dissolve particles and some metal ions adhering to it.
- Process location: It can be arranged after SPM, SC1, or SC2, depending on the process requirements, and can even be used multiple times; most companies place it after SPM.
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SC-1,SC-2,SPM,DHF
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