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Japan’s NCT Delivers 6-Inch Gallium Oxide Wafers
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Company News
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Release time:
2026-03-12
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Recently, NCT, Japan’s leading gallium oxide company, announced the commencement of deliveries of 150-mm (6-inch) β-Ga₂O₃ wafer samples, marking a breakthrough in scaling up to larger wafer sizes and a critical step toward industrialization. Previously, the mainstream β-Ga₂O₃ wafers were 4 inches in diameter, which were incompatible with existing power-device production lines. The new 6-inch products, built on advancements in 4-inch technology and manufactured using the EFG seeded growth method, have achieved stable scale-up, thereby overcoming the industry’s size bottleneck.
In recent years, NCT has focused on the coordinated development of gallium oxide materials and devices, with a series of technological breakthroughs in 2025: in April, it unveiled the first research-grade sample of a fully gallium-oxide-based planar Schottky diode; in August, it partnered with U.S.-based Kyma Technologies to develop high-quality epitaxial wafers targeting multi-kilovolt high-voltage device applications; in November, it launched high-quality (011)-oriented epitaxial wafers with performance that sets industry benchmarks; and in December, it developed a novel DG crystal growth technology that eliminates the need for expensive iridium crucibles, reducing substrate costs to one-tenth of those associated with conventional methods.
Leveraging its technological expertise, NCT has outlined a clear industrialization roadmap: delivering 6-inch epitaxial wafer samples in 2027, achieving mass production of 6-inch wafers by 2029 while adopting the DG process to reduce costs, and developing 8-inch wafers by 2035 for integration into mainstream production lines. Meanwhile, global efforts in gallium oxide R&D are intensifying, with companies and research institutions in Japan, the United States, China, Europe, and other regions increasing their investments, thereby fostering a differentiated competitive landscape.
Japanese companies each have their own areas of focus: the United States centers on academic incubation to drive engineering development, while Europe emphasizes epitaxial growth technologies. Chinese firms, by contrast, have delivered outstanding performance, consistently achieving breakthroughs in the large-size gallium oxide segment. As a core material for ultra-wide-bandgap semiconductors, gallium oxide boasts a bandgap of 4.9 eV—significantly higher than that of SiC and GaN—endowing it with high breakdown voltage and low-loss characteristics that align perfectly with the needs of the new-energy industry.
Currently, gallium oxide is disrupting the traditional semiconductor monopoly and holds the potential to spearhead an efficiency revolution in the high-voltage power electronics sector; however, it still faces challenges such as inadequate thermal management. China has achieved significant breakthroughs in the large-size segment, gradually breaking Japan’s dominant position and injecting new momentum into global industrialization.
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