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Intel Develops World’s Thinnest Gallium Nitride Chiplet, Just 19 Micrometers Thick
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Industry News
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Release time:
2026-04-10
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Intel Foundry Services has just achieved a new milestone by successfully developing the world’s first—and thinnest—gallium nitride chiplet, with a thickness of only 19 micrometers.
With this latest breakthrough, Intel has achieved higher power, faster speeds, and greater energy efficiency within a compact form factor. The research team at Intel Foundry Services has unveiled the first gallium nitride (GaN) chiplet fabricated on 300-millimeter GaN-on-silicon wafers, with a thickness of just 19 micrometers, which will drive the next phase of advancement in the semiconductor industry. The key highlights of this achievement are as follows:
1. Intel Foundry Services has developed the world’s thinnest gallium nitride (GaN) chiplet, with a silicon substrate just 19 micrometers thick, fabricated from 300-millimeter silicon-based GaN wafers.
2. Researchers have successfully integrated gallium nitride transistors with conventional silicon-based digital circuits on a single chip, enabling complex computational functions to be implemented directly within the power die without the need for additional discrete companion chips.
3. Rigorous testing and validation demonstrate that this new gallium nitride chiplet technology has reliable commercial deployment potential, meets the reliability standards required for real-world applications, and can enable the development of smaller, more efficient electronic devices for data centers, next-generation 5G and 6G communications, and other applications.
(Source: IT Home)
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