Natural oxide layer etching-HF Etch
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Process Technology
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Release time:
2024-07-31
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DHF can remove the natural oxide film on the surface of silicon wafers. Therefore, the metal attached to the natural oxide film will be dissolved into the cleaning solution, and DHF inhibits the formation of oxide film. Therefore, metals such as Al, Fe, Zn, Ni on the surface of silicon wafers can be easily removed. DHF can also remove metal hydroxides attached to the natural oxide film.
DHF composition: H2O: HF = 100: 1
After DHF wet etching, silicon-hydrogen bonds are formed on the surface of silicon wafers, presenting a hydrophobic surface. Therefore, the HF acid remaining on the surface is rinsed by overflowing deionized water (OFR) after the HF tank
Chemical reaction principle: SiO2 + 6HF H2SiF6 + 2H2O
DHF has almost no corrosion to the silicon on the surface of silicon wafers. The etching conditions of HF on different materials are as follows: PSG >> SiO2>> Si3N4 >>Si
HF,Etching,Hydrofluoric acid,Acid etching
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