Study on H3PO4 Etching of Silicon Nitride

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Process Technology

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Release time:

2024-07-31

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Silicon nitride etching (H3PO4 Etch)

Purpose: To remove the Si3N4 layer used as a hard mask to prepare for the next step.

Etching solution: H3PO4 solution with a concentration of about 87%. The etching rate of H3PO4 on Si3N4 is the highest at 160°C.

H3PO4 is easy to volatilize, and the etching rate gradually decreases as the chemical reaction time increases.

In order to better control this reaction process, two H3PO4 solution tanks are generally used to etch Si3N4. The first tank is mainly used to remove most of the Si3N4 layer, and the second tank is used for etching.

H3PO4 Etch,Silicon nitride etching

Pre

BOE Etching Process Introduction

Natural oxide layer etching-HF Etch

BOE Etching Process Introduction

Natural oxide layer etching-HF Etch

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