Basic Semiconductor has reached a strategic cooperation with Toshiba

Category:

Industry News

Author:

Source:

Release time:

2025-08-29

Visits:

Recently, Shenzhen Basic Semiconductor Co., Ltd. (hereinafter referred to as "Basic Semiconductor") and Toshiba Electronic Devices & Storage Corporation (hereinafter referred to as "Toshiba Electronic Devices") officially signed a strategic cooperation agreement. By combining the advanced silicon carbide and IGBT chip technologies owned by both parties with high-performance, high-reliability power module technology, they aim to provide more competitive power semiconductor solutions for the global automotive and industrial markets.

As a leading company in the global semiconductor field, Toshiba Electronic Devices' power semiconductor products feature high power density and quality stability, helping to improve power conversion efficiency and reduce environmental impact. Among them, Toshiba Electronic Devices' silicon carbide MOSFETs combine low on-resistance and high reliability, while IGBTs are characterized by high current and high reliability, both having rich application cases. Basic Semiconductor is a benchmark enterprise in China's silicon carbide power semiconductor industry, possessing core advantages in silicon carbide chip and power module technology. It has successfully developed multiple series of automotive-grade and industrial-grade silicon carbide power modules, with products widely used in new energy vehicles and photovoltaic energy storage fields.

In this strategic cooperation, both parties will conduct in-depth collaboration around power semiconductor technology research and development, industrial chain coordination, and market applications. Through joint research and development, they aim to break through key technical bottlenecks and jointly develop higher-performance, higher-reliability power module products to meet diverse customer needs and promote innovative applications of power semiconductors in the global new energy vehicle and industrial sectors. In addition, both parties will explore diversified cooperation models with the goal of building a sustainable society, promoting synergistic business growth, and contributing industrial strength to address global climate warming.

(Source: Basic Semiconductor)

Pre

Professor Zhang Jincheng and Professor Ning Jing from the team of Academician Hao Yue at Xidian University have made breakthrough progress in the field of diamond-based gallium oxide thermal management.

1200V Vertical GaN-on-Si MOSFET

COOKIES

Our website uses cookies and similar technologies to personalize the advertising shown to you and to help you get the best experience on our website. For more information, see our Privacy & Cookie Policy

COOKIES

required

These cookies are necessary for basic functions such as payment. Standard cookies cannot be turned off and do not store any of your information.

analyze

These cookies collect information, such as how many people are using our site or which pages are popular, to help us improve the customer experience. Turning these cookies off will mean we can't collect information to improve your experience.

Feature

These cookies enable the website to provide enhanced functionality and personalization. They may be set by us or by third-party providers whose services we have added to our pages. If you do not allow these cookies, some or all of these services may not function properly.

advertise

These cookies help us understand what you are interested in so that we can show you relevant advertising on other websites. Turning these cookies off will mean we are unable to show you any personalized advertising.

Business License