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The team led by Academician Yao Hao from Xidian University has achieved a major breakthrough: Professors Jincheng Zhang and Hong Zhou have successfully developed a 100-kV-class high-voltage gallium oxide power device.
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2025-09-24
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Recently, a research team from Xi'an University of Electronic Science and Technology has achieved groundbreaking progress in the field of gallium oxide power devices made from ultra-wide bandgap semiconductor materials. The related findings were published on August 14, 2025, under the title "120 A/1.78 kV p-Cr 2 O 3 /n-β-Ga 2 O 3 "Tapered Mesa Edge Termination Heterojunction PN Diodes" was published online in IEEE Electron Device Letters (DOI: 10.1109/LED.2025.3598936). This study has achieved 100 ampere-level performance for the first time internationally. Kilovolt High-Voltage Oxide Gallium Power Diode The fabricated device can withstand a forward current of 120 A, while its reverse breakdown voltage exceeds 1700 V. This research was led by Professor Jincheng Zhang and Professor Hong Zhou from the team of Academician Yue Hao at Xidian University, with Professor Zhang and Professor Zhou serving as the corresponding authors of the paper. Dr. Yitao Feng is the first author.
β-Ga 2 O 3 It is next-generation power electronics device technology, featuring a wide bandgap of 4.8 eV and an approximate mobility of around 200 cm²/V·s. 2 /V·s's intrinsic electron mobility and 1.5–2 × 10 7 The high saturation velocity of cm/s enables β-Ga 2 O 3 Power devices demonstrate significant potential in high-voltage, high-current, and high-efficiency applications. Industrial applications demand power diodes capable of serving as solid-state switches for high-power control. Therefore, developing large-size diodes rated at hundreds of amperes with high current capacity and kilovolt-level high breakdown voltage is crucial for advancing β-Ga—in particular 2 O 3 The practical application and industrialization of power devices are crucial.
This study employs Cr with high thermal stability. 2 O 3 As a p-type material, and n-type β-Ga 2 O 3 A heterojunction was formed, and the sloped mesa edge termination structure was employed in synergy to optimize the electric field distribution, resulting in an active region area of 9 mm. 2 The p-Cr 2 O 3 /n-β-Ga 2 O 3 Heterojunction diode. The device achieves a forward current of 120 A and a breakdown voltage of 1780 V, while maintaining a low on-state resistance of 69 mΩ and an impressive power density of 0.511 GW/cm². 2 The high-power figure of merit. This achievement significantly advances the application of gallium oxide materials in next-generation high-voltage, high-power industrial power electronics.
Paper link: https://ieeexplore.ieee.org/document/11124913
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