Major breakthrough in SiC technology! Han TianTianCheng globally debuts 12-inch silicon carbide epitaxial wafers.

A major breakthrough in SiC technology! Han Tiancheng has globally launched the world’s first 12-inch silicon carbide epitaxial wafers. Compared to today’s mainstream 150mm (6-inch) SiC epitaxial wafers—and the 200mm (8-inch) products that are still in the early stages of industrialization—these 300mm (12-inch) wafers, with their significantly larger diameter, enable a substantial increase in the number of chips (devices) that can be processed per wafer under the same production conditions: up to 4.4 times more than on 6-inch wafers and 2.3 times more than on 8-inch wafers. This breakthrough not only dramatically improves the production efficiency of downstream power devices but also substantially reduces the unit manufacturing cost of SiC chips, helping Han Tiancheng build a technologically leading competitive edge and laying a critical foundation for the large-scale, low-cost application of silicon carbide in the industry.

Compared to first-generation silicon semiconductors, third-generation silicon carbide semiconductors boast superior performance in high frequency, high voltage, and high temperature applications, enabling systems with lower power consumption, smaller size, and reduced weight. By 2025, the global semiconductor industry will have approximately 200 12-inch silicon wafer production lines, and global sales of 12-inch silicon wafers are forecast to exceed 100 million units—many of which will be used in silicon power and analog chip manufacturing. The fiercely competitive silicon carbide semiconductor industry is also expected to enter the 12-inch era, where technologically advanced companies will gain a significant competitive edge.

Hantian Tiancheng is China’s first manufacturer to achieve commercial-scale supply of 3-inch, 4-inch, and 6-inch silicon carbide epitaxial wafers. In May 2023, it became the first manufacturer in the Greater China region to break through the technological barrier for 8-inch silicon carbide epitaxial wafers, and in 2024, it became the world’s only company to achieve mass sales of 8-inch silicon carbide epitaxial wafers. In October 2025, the company was included on the national-level list of announced Single Champion enterprises in the manufacturing sector (for silicon carbide epitaxial wafers). It is also a key “Specialized, Refined, Differentiated, and Innovative” small giant enterprise at the national level (first batch, first year). The company took the lead in drafting the world’s first—and currently only—international SEMI standard for silicon carbide epitaxy, the “4H-SiC Homo-epitaxial Wafer Specification” (SEMI M092-0423). Its products are used to fabricate silicon carbide power devices and are widely applied in fields such as new-energy vehicles, photovoltaic power generation, AI power supplies, rail transit, smart grids, and aerospace.

It is understood that, leveraging the independent technological breakthroughs of its R&D team, Handian Tiancheng has successfully developed the world’s first 12-inch high-quality silicon carbide epitaxial wafer at the Silicon Carbide Semiconductor Industry Park in Xiang’an District, Xiamen.

The product demonstrates outstanding performance in key technical indicators: the non-uniformity of epitaxial layer thickness is controlled within 3%, the non-uniformity of doping concentration is ≤8%, and the yield of 2mm×2mm chips exceeds 96%. These characteristics fully meet the high-reliability application requirements in downstream power device fields.

The core supply chain of this product has achieved domestic collaboration: the epitaxial equipment used is domestically produced by QiuShi Semiconductor, a subsidiary of Jingsheng Machinery & Electric; the substrates are supplied by Zhejiang Jingrui (SuperSiC), another subsidiary of Jingsheng Machinery & Electric.

Currently, Han Tian Cheng has begun preparations for the mass supply of 12-inch silicon carbide epitaxial wafers.