RCA cleaning machine
RCA cleaning machine
- Process Step
- Application area
- 介绍
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- Commodity name: RCA cleaning machine
Cleaning methods commonly used in semiconductor manufacturing processes
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Used in wafer manufacturing for cleaning before and after thin-film deposition, before dry etching, after ion implantation, before and after grinding, before and after annealing, before and after polishing, as well as in chemical wet etching cleaning processes.
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RCA cleaning typically includes four steps: first, an acidic oxidation clean using sulfuric acid-based hydrogen peroxide; second, an alkaline oxidation clean using amine-based hydrogen peroxide; third, cleaning with dilute hydrofluoric acid solution; and finally, an acidic oxidation clean using hydrochloric acid-based hydrogen peroxide. After each cleaning step, ultra-pure water (DIW) rinsing is performed, followed by drying with a low-boiling-point organic solvent.
This process is primarily used to clean chemicals and impurities from the wafer surface.
- Final Cleaning
- Wafer pre-cleaning
- Pre-sputtering cleaning
- Pre-oxidation cleaning
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RCA cleaning typically includes four steps: first, an acidic oxidation clean using sulfuric acid-based hydrogen peroxide; second, an alkaline oxidation clean using amine-based hydrogen peroxide; third, cleaning with dilute hydrofluoric acid solution; and finally, an acidic oxidation clean using hydrochloric acid-based hydrogen peroxide. After each cleaning step, ultra-pure water (DIW) rinsing is performed, followed by drying with a low-boiling-point organic solvent.
This process is primarily used to clean chemicals and impurities from the wafer surface.
- Final Cleaning
- Wafer pre-cleaning
- Pre-sputtering cleaning
- Pre-oxidation cleaning
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